CGHV96100F2

Manufacturer: Wolfspeed (formerly Cree)
Type: Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)
Primary Application: RF Power Amplification

1. Key Specifications

• Voltage/Current: Operational voltage 96V, continuous wave (CW) output power 100W (typical).

• Frequency Range: DC–3.5 GHz, covering L-band to S-band (1–4 GHz).

• Gain & Efficiency:

  • At 2.5 GHz: Typical gain 17 dB, power-added efficiency (PAE) 65%.

  • At 3.5 GHz: Gain 14 dB, PAE 60%.

• Package: Metal-ceramic flange package with high thermal conductivity for heat dissipation.

2. Typical Applications

• Radar Systems: Final-stage amplification for military/civilian radar.

• Communication Base Stations: High-power RF units in 4G/5G macro base stations.

• Satellite Communication: Transmitters for Ka/Ku-band ground stations.

• Industrial Heating: RF energy applications (e.g., plasma generation).

3. Key Advantages

• High Power Density: GaN material enables high-frequency, high-power output in a compact size (smaller than traditional LDMOS).

• Broadband Matching: Built-in input pre-matching simplifies circuit design.

• High-Temperature Tolerance: Junction temperature up to 175°C, suitable for harsh environments.

4. Design Considerations

• Bias Circuit: Requires negative gate drive (typical Vgs = -2.5V); low-noise linear power supply recommended.

• Thermal Management: Substrate temperature should be ≤ 85°C; use high-thermal-conductivity interfaces (e.g., copper-tungsten heat sinks).

• Stability: Additional anti-oscillation networks may be needed for low-frequency bands (<1 GHz).

5. Alternative Models

• Competitors:

  • Qorvo QPD1025 (100W, DC–3.5 GHz)

  • MACOM MAGe-102425 (GaN broadband PA).

• Upgraded Model: Wolfspeed CGHV14800F (higher power, supports 4–8 GHz).

Please contact me if you want to purchase the following  parts.
Alan C. ： whatsapp: +8619868644542 ，alan@hardfindchip.com

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